Molybdän · Power electronics and CIGS solar cell

Molybdenum Substrates

High-flatness molybdenum substrates for power electronics (IGBT, SiC, GaN), CIGS solar cell modules and diffusion cooling units. The thermal conductivity (138 W/m·K) and low thermal expansion (αT 4.8 ppm/K) of Mo minimise thermomechanical stress at the material-chip interface.

• Thermal conductivity 138 W/m·K - efficient heat dissipation
• alphaT 4.8 ppm/K - compatible with Si, GaAs, SiC and Al2O3 ceramics
• Flatness <= 0.05 mm / 100 mm · Surface roughness Ra <= 0.2 um after lapping
• Thickness tolerances ±0.01 mm · Laser cut or stamped
• Finish options: as-rolled, single-side lapped / double-side lapped, electroless Ni